features for general purpose applications mechanical data case:jedec do--35,glass case weight: approx. 0.13 gram (ratings at 25 ambient temperature unless otherw ise specified) min. units 60.0 v na v v pf ns /mw storage temperature range t stg reverse breakdow n voltage @ i r =10 a symbols v r electrical characteristics i r termal resistance junction to ambient air c j 1.0 1 n 62 6 3 s m a ll s i gn al s c ho tt k y d i od e v o l t a g e r a nge: 6 0 v power dissipation: 4 0 0 m w d o - 35 ( g l a ss ) mw a value peak reverse voltage 60.0 4 0 0 1) symbols polarity: color band denotes cathode end junction tenperature p ow er d i ss i pa t i on ( i n f i n i t e h eat s i n k ) absolute ratings(limiting values) v rrm p tot i fsm units v fast switching and low logic level applications metal silicon schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices,steering,biasing and coupling diodes for r ja leakage current @ v r =50v junction capacitance @ v r =0v,f =1mhz reverse recovery time @ i f =i r =5ma,recover to 0.1 i r forw ard voltage drop @ i f =1ma v f 0.3 1 ) valid provided that electrodes are kept at ambient temperature. maximum single cycle surge 10 s square w ave 200.0 2.2 2.0 i f =15ma v f t rr max. ty p. 1 t j 0.41 c -55 ---+ 150 1 2 5 dimensions in millimeters diode semiconductor korea www.diode.kr
i r 0 20 40 30 v r v 50 100 0.01 0.0 2 0.05 0 . 1 0.2 0.5 1 5 2 2 0 5 0 10 10 150 125 ?? 100 ?? 75 ?? 50 25 ?? a fi g. 3 -- typi cal vari ati on of reverse current at xxxxxxxxx vari ati on temperatures 1 n 6263 fi g. 1 -- typi cal vari ati on of fwd. current vs fwd. xxxxxxxx- voltage for pri mary conduction through the xxxxxxxx- schottky barrier fi g. 2 -- typi cal forward conducti on curve of xxxxx combi nati on schottky barri er and pn xxxxx juncti on guard ri ng fig. 4 -- typi cal capaci tance curve as a xxxxx- juncti on of reverse voltage 0 00.51 80 20 40 60 100 i f ma v v f pf v c j v r 0 20 40 30 50 10 2 1 0 t j =25 i f 0.01 0.0 2 0. 0 5 0.1 01 v f ma v 1 .0 2 . 0 10 0.5 5 .0 0. 5 0 . 2 www.diode.kr diode semiconductor korea
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